• DocumentCode
    330896
  • Title

    A theoretical study of quantum well terahertz lasers

  • Author

    Donovan, K. ; Harrison, P. ; Kelsall, R.W. ; Kinsler, P.

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Leeds Univ., UK
  • fYear
    1998
  • fDate
    3-4 Sep 1998
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    A theoretical study is made of a GaAs/AlGaAs triple quantum well structure with the aim of developing a three level laser to emit in the terahertz region of the spectrum. The population inversion necessary for laser emission to take place is estimated by calculating the net nonradiative transition rates. It is found that the most effective way of achieving a population inversion is by depopulation to a strongly coupled state. The population inversion can be increased further by decreasing the barrier width between the quantum wells associated with the two lowest energy levels
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; population inversion; quantum well lasers; submillimetre wave lasers; GaAs-AlGaAs; III-V semiconductors; barrier width; depopulation; energy levels; laser emission; net nonradiative transition rates; population inversion; quantum well terahertz lasers; strongly coupled state; three level laser; triple quantum well structure; Energy states; Laser theory; Laser transitions; Optical scattering; Particle scattering; Phonons; Power engineering and energy; Quantum cascade lasers; Quantum mechanics; Quantum well lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
  • Conference_Location
    Leeds
  • Print_ISBN
    0-7803-4903-2
  • Type

    conf

  • DOI
    10.1109/THZ.1998.731737
  • Filename
    731737