MO-VPE for optoelectronic devices with organometallic phosphorus precursors

Two organometallic phosphorus precursors, tert-butylphosphine (TBP) and ethylenediphosphine (or bisphosphinoethane, BPE), were studied. Both can be used successfully for the growth, using metal organic vapor phase epitaxy (MOVPE) of high-quality lasers. BPE does not exhibit the donor doping enhancement effect; it leads to the best photoluminescence results and the lowest effective cost, while TBP has the advantages of higher vapor pressure and more stable behavior at high growth temperatures. The growth experiments embraced a range of materials, including undoped, Zn-doped and Si-doped InP; quaternary InGaAsP alloys of different compositions grown with the new P precursor and AsH/sub 3/ as well as (in the case of TBP) with tert-butyl arsine (TBA); complete InP/InGaAsP heterostructures, both undoped and doped, for laser devices at 1.3 and 1.5 mu m emission wavelength; and, finally, sophisticated multiquantum-well (MQW) laser heterostructures at 1.5 mu m.<>