• DocumentCode
    330983
  • Title

    Effect of composition on refractive index dispersion in Ge-Sb-S thin films

  • Author

    Pamukchieva, Vesela ; Szekeres, Anna ; Sharlandjiev, Peter ; Alexia, Z. ; Gartner, Mariuca

  • Author_Institution
    Inst. of Solid State Phys., Sofia, Bulgaria
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    101
  • Abstract
    GexSb40-xS60 thin films are studied by means of spectrophotometry in the light wavelength region of 0.5-2.5 μm. The refractive index value were determined from the transmission spectra. The dispersion parameters E0 and Ed were evaluated and considered in term of the average coordination number Z. The compositional dependences exhibit a peculiarity around Z=2.65-2.67 which can be connected with a topological phase transition of the film structure
  • Keywords
    antimony compounds; chalcogenide glasses; germanium compounds; optical dispersion; refractive index; semiconductor thin films; 0.5 to 2.5 micron; Ge-Sb-S; Ge-Sb-S thin film; composition dependence; coordination number; refractive index dispersion; spectrophotometry; structure; topological phase transition; transmission spectra; Dispersion; Gaussian processes; Newton method; Optical films; Optical refraction; Optical variables control; Oscillators; Refractive index; Solids; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732296
  • Filename
    732296