• DocumentCode
    331011
  • Title

    Growth mechanism of light emitting silicon nanostructures

  • Author

    Pluguru, R. ; Cracium, G. ; Mendez, B. ; Piqueras, J.

  • Author_Institution
    Inst. of Microtechnol., Bucharest, Romania
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    237
  • Abstract
    Structural changes in the amorphous silicon layers have been investigated as process to obtain light emitting silicon nanostructures. It was evidenced that, under 1013 and 1014 cm-2 implantation, nanosized crystalline structures grow in the amorphous matrix. Cathodoluminescence spectra with an 400 nm intense band and 580, 650 weak bands are characteristic for higher dose implanted and anodized layers. The structural changes are correlated with the emission properties in the 400-670 nm range
  • Keywords
    anodised layers; cathodoluminescence; crystallisation; elemental semiconductors; ion implantation; nanostructured materials; silicon; 400 to 670 nm; Si:B; amorphous layer; anodization; boron ion implantation; cathodoluminescence spectra; crystalline structure; growth; light emission; silicon nanostructure; Amorphous materials; Boron; Chemicals; Crystallization; Grain size; Hafnium; Nanostructures; Silicon; Temperature; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732358
  • Filename
    732358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331011