High temperature Ti-Al-based ohmic contacts to p-6H-SiC

Author

Andreev, A.N. ; Rastegaeva, M.G. ; Babanin, A.I. ; Yagovkina, M.A. ; Rendokova, S.V. ; Savkina, N.S.

Author_Institution

A.F. Ioffe Phys.-Tech. Inst. Acad. of Sci., St. Petersburg, Russia

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

311

Abstract

Low-resistance ohmic contacts (10^-4 Ohm cm² at N_a-N_d=10¹⁹ cm^-3) based on Ti-Al composition were prepared to p-6H-SiC grown by various techniques. This contacts demonstrate exellent reproductivity and the ones can operate at the environment temperatures up to 550°C and densities of direct current up to 10⁴ A/cm². Structure and composition of contact coating were studied by AES and SIMS layer-by-layer technique and X-ray phase analysis. Advanced study of electrical characteristic of Ti-Al-based ohmic contacts was carried out

Keywords

Auger electron spectra; X-ray diffraction; aluminium alloys; annealing; contact resistance; high-temperature electronics; ohmic contacts; secondary ion mass spectra; semiconductor materials; silicon compounds; titanium alloys; 550 C; AES; DC current density; SIMS; SiC-TiAl; X-ray phase analysis; annealing; composition; electrical characteristics; high temperature Ti-Al ohmic contact; layer-by-layer technique; p-6H-SiC; specific contact resistance; structure; Aluminum; Annealing; Coatings; Contact resistance; Doping; Epitaxial layers; Ohmic contacts; Plasma temperature; Silicon carbide; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732387

Filename

732387