DocumentCode
331057
Title
Planar bulk InP avalanche photodiode design for 2.5 and 10 Gb/s applications
Author
Itzler, Mark A. ; Wang, C.S. ; McCoy, S. ; Codd, Nick ; Komaba, N.
Author_Institution
EPITAXX Inc., West Treaton, NJ, USA
Volume
1
fYear
1998
fDate
20-24 Sep 1998
Firstpage
59
Abstract
We present a versatile design for a planar bulk-InP avalanche photodiode suitable for 2.5 Gb/s and 10 Gb/s applications. Device processing similar to that of p-i-n diodes results in sub-nA dark current, high bandwidth, and high reliability with edge breakdown controlled by shaping of the diffusion profile and floating guard rings
Keywords
III-V semiconductors; avalanche photodiodes; dark conductivity; indium compounds; optical design techniques; optical fabrication; optical receivers; semiconductor device reliability; 10 Gbit/s; 2.5 Gbit/s; Gb/s applications; InP; device processing; diffusion profile shaping; edge breakdown; floating guard rings; high bandwidth; high reliability; p-i-n diodes; planar bulk InP avalanche photodiode design; planar bulk-InP avalanche photodiode; sub-nA dark current; Absorption; Avalanche photodiodes; Bandwidth; Electric breakdown; Epitaxial growth; Indium phosphide; Optical receivers; P-i-n diodes; Shape control; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1998. 24th European Conference on
Conference_Location
Madrid
Print_ISBN
84-89900-14-0
Type
conf
DOI
10.1109/ECOC.1998.732435
Filename
732435
Link To Document