• DocumentCode
    3312217
  • Title

    The Corrugated P-Base IGCT - a New Benchmark for Large Area SQA Scaling

  • Author

    Wikstrom, Tobias ; Stiasny, Thomas ; Rahimo, Munaf ; Cottet, Didier ; Streit, Peter

  • Author_Institution
    ABB Schweiz AG, Lenzburg
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    A 91 mm diameter IGCT with extraordinary safe operating area (SOA) is presented in this paper. The power density at turn-off reached values as high as 700 W/cm2, which is twice the previously reported SOA limit for devices with a comparable diameter. The improvement was achieved by masking one of the p-base diffusions, giving the p-base a corrugated appearance as well as improving the gate circuit.
  • Keywords
    thyristors; corrugated p-base IGCT; extraordinary safe operating area; gate circuit; integrated gate commutated thyristor; size 91 mm; Equivalent circuits; Impedance; Inductors; Insulated gate bipolar transistors; PIN photodiodes; Power semiconductor devices; Semiconductor optical amplifiers; Thyristors; Turning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294924
  • Filename
    4294924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3312217