DocumentCode
3312308
Title
Low Parasitic Current `Half ON´ Operation of Battery Protection IC
Author
Matsunaga, S. ; Sawada, M. ; Sugimoto, M. ; Fujishima, N.
Author_Institution
Fuji Electr. Adv. Technol. Ltd., Nagano
fYear
2007
fDate
27-31 May 2007
Firstpage
49
Lastpage
52
Abstract
Parasitic diode is frequently employed in integrated power devices, and causes parasitic leakage current. Large leakage current may cause troubles, such as latch up, malfunction of analogue circuit and increase in consumption power. In a single chip Li-ion battery protection IC, new operation method to charge a battery without using the parasitic diode is devised. To detect current direction precisely, only half of the bi-directional switches are turned on. We call it ´half on´ operation. This operation suppresses parasitic current and heat generation. The parasitic current is reduced from a few milli-amperes to a few nano- amperes. Chip temperature during charging can be lowered from 190 to 65 degrees Celsius.
Keywords
battery management systems; field effect transistor switches; leakage currents; lithium; secondary cells; Li; Li - Element; bidirectional switches; integrated power devices; parasitic diode; parasitic leakage current; single chip Li-ion battery protection IC; Batteries; Bidirectional control; Costs; Electrons; Leakage current; MOSFETs; Protection; Semiconductor diodes; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294929
Filename
4294929
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