• DocumentCode
    3312308
  • Title

    Low Parasitic Current `Half ON´ Operation of Battery Protection IC

  • Author

    Matsunaga, S. ; Sawada, M. ; Sugimoto, M. ; Fujishima, N.

  • Author_Institution
    Fuji Electr. Adv. Technol. Ltd., Nagano
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    Parasitic diode is frequently employed in integrated power devices, and causes parasitic leakage current. Large leakage current may cause troubles, such as latch up, malfunction of analogue circuit and increase in consumption power. In a single chip Li-ion battery protection IC, new operation method to charge a battery without using the parasitic diode is devised. To detect current direction precisely, only half of the bi-directional switches are turned on. We call it ´half on´ operation. This operation suppresses parasitic current and heat generation. The parasitic current is reduced from a few milli-amperes to a few nano- amperes. Chip temperature during charging can be lowered from 190 to 65 degrees Celsius.
  • Keywords
    battery management systems; field effect transistor switches; leakage currents; lithium; secondary cells; Li; Li - Element; bidirectional switches; integrated power devices; parasitic diode; parasitic leakage current; single chip Li-ion battery protection IC; Batteries; Bidirectional control; Costs; Electrons; Leakage current; MOSFETs; Protection; Semiconductor diodes; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294929
  • Filename
    4294929