DocumentCode
3312720
Title
Advanced Power SiP with Wireless Bonding for Voltage Regulators
Author
Hashimoto, T. ; Uno, T. ; Satou, Y. ; Shiraishi, M. ; Kawashima, T. ; Matsuura, N.
Author_Institution
Hitachi Ltd., Hitachi
fYear
2007
fDate
27-31 May 2007
Firstpage
125
Lastpage
128
Abstract
An advanced power system in package (SiP) for voltage regulators is presented; it offers the world´s lowest power dissipation of 4.4 W at 1 MHz, with an output voltage of 1.3 V and an output current of 25 A. Its package resistance is 88% lower due to using Cu leads for the bonding, which reduces the spreading resistance of the MOSFET. The diode loss is 43% lower due to using a Schottky barrier diode incorporated into the low-side MOSFET. The thermal resistance is also 43% lower due to using a large topside Cu lead.
Keywords
MOSFET; Schottky barriers; Schottky diodes; computer power supplies; system-in-package; voltage regulators; MOSFET; Schottky barrier diode; advanced power system in package; voltage regulators; wireless bonding; Bonding; MOSFET circuits; Packaging; Power MOSFET; Power dissipation; Power systems; Regulators; Schottky diodes; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294948
Filename
4294948
Link To Document