DocumentCode
3313057
Title
Engineering RESURF LDMOSFETs for Robust SOA, ESD Protection and Energy Capability
Author
Zhu, R. ; Khemka, V. ; Bose, A.
Author_Institution
Freescale Semicond., Tempe
fYear
2007
fDate
27-31 May 2007
Firstpage
185
Lastpage
188
Abstract
Power device safe operating area (SOA), ESD immunity and energy capability are of particular importance for smart power IC technologies used in harsh applications. This paper discusses some of the powerful drain and body engineering techniques used in Freescale´s advanced smart power technology to provide robust device characteristics.
Keywords
electrostatic discharge; power MOSFET; power integrated circuits; ESD protection; RESURF LDMOSFET; body engineering technique; energy capability; powerful drain technique; safe operating area; smart power IC technologies; Buck converters; Current density; Electrostatic discharge; Power engineering and energy; Power integrated circuits; Power semiconductor devices; Protection; Robustness; Semiconductor optical amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294963
Filename
4294963
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