Kink model for SOI MOSFET

Author

Kaifi, Mohammad ; Siddiqui, Dr M J

Author_Institution

SPMIT Allahabad, Allahabad, India

fYear

2011

fDate

17-19 Dec. 2011

Firstpage

216

Lastpage

219

Abstract

In order to improve the modeling of SOI MOSFET a precise evaluation of the excess current due to impact ionization is needed. This increase in drain current in SOI MOSFET at higher drain voltages is known as Kink effect. In this paper a simple model is proposed for the excess current resulting from impact ionization. Model is based upon estimation of electric field in the saturated part of channel. The electric field in saturated part of channel is obtained by the solution of two dimensional Poisson´s equation. The model is semi-analytical and uses only two fitting parameters which is desirable for circuit simulation. The attractive property of the model is its simplicity. The model has been verified using the experimental results and is found to be quite precise.

Keywords

MOSFET; Poisson equation; circuit simulation; impact ionisation; semiconductor device models; silicon-on-insulator; 2D Poisson equation; Kink effect; Kink model; SOI MOSFET; Si; circuit simulation; drain current; drain voltages; electric field; excess current; impact ionization; semiconductor device models; silicon-on-insulator; Electric fields; Equations; Impact ionization; Integrated circuit modeling; MOSFET circuits; Mathematical model; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on

Conference_Location

Aligarh

Print_ISBN

978-1-4577-1105-3

Type

conf

DOI

10.1109/MSPCT.2011.6150478

Filename

6150478