Sub-micron Cell Pitch 30 V N-channel UMOSFET with Ultra Low On-resistance

We developed new sub-micron cell pitch 30 V n-channel UMOSFET with ultra low on-resistance. In the UMOSFET structure, we adopted a layered oxide as interlayer dielectric and equalized the width to the trench gate width to realize the narrow unit cell pitch (<1.0 mum). We optimized layout dimensions for new rectangular cell design and stripe design. As a result, we achieved the lowest specific on-resistance (Rsp) of 4.3 mOmegamm² at Vgs=10 V and 5.0 mOmegamm² at Vgs=4.5 V in 30 V class for the fabricated rectangular cell UMOSFET.