20V-400A SiC Zener Diodes with Excellent Temperature Coefficient

Author

Ishii, R. ; Tsuchida, H. ; Nakayama, K. ; Sugawara, Y.

Author_Institution

Central Res. Inst. of Electr. Power Ind., Yokosuka

fYear

2007

fDate

27-31 May 2007

Firstpage

277

Lastpage

280

Abstract

This paper reports the achievement of 20 V-400 A 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm times 4 mm and MESA-JTE. The temperature coefficient of the breakdown voltage is as small as 5.7times10^-5 1/K (positive) in the range from room temperature to 200degC. An extremely low dynamic resistance of 0.01 Omega is confirmed in dynamic operation. A large peak reverse current of 400 A is achieved, which corresponds to a high reverse current density of 2500 A/cm² and an 8 kW pulse operation capability.

Keywords

Zener diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 4H-SiC; MESA-JTE; SiC; Zener diodes; breakdown voltage; current 400 A; extremely low dynamic resistance; high reverse current density; high-doped pn junction; large peak reverse current; temperature 20 C to 200 C; temperature coefficient; voltage 20 V; Circuits; Current density; Fabrication; Semiconductor diodes; Silicon carbide; Substrates; Temperature distribution; Thermal conductivity; Voltage; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294986

Filename

4294986