LPCVD profile simulation using a re-emission model

Author

McVittie, J.P. ; Rey, J.C. ; Cheng, L.Y. ; IslamRaja, M.M. ; Saraswat, K.C.

Author_Institution

Center for Integrated Syst., Standford Univ., CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

917

Lastpage

920

Abstract

A novel, physically based 3D simulator has been developed that includes the dominant effect of re-emission. This simulator is part of the Stanford Profile Emulator for Etching and Deposition in IC Engineering (SPEEDIE). Unlike previous simulators which consider only the arrival of deposition precursors by unshadowed direct transport and by surface diffusion, SPEEDIE also considers transport into shadowed areas by adsorption and re-emission. The importance of re-emission was established by using overhang test structures to separate the roles of surface diffusion and re-emission. For the depositions investigated (SiO/sub 2/, poly-Si and W) it was found that re-emission dominates over surface diffusion in controlling surface contours. Using the simulator to fit experimental LPCVD (low-pressure chemical vapor deposition) SiO/sub 2/ profiles, it was found that a single constant sticking coefficient model with a cosine re-emission distribution gave excellent fits independent of geometry for a given deposition condition.<>

Keywords

chemical vapour deposition; digital simulation; electronic engineering computing; semiconductor technology; surface topography; LPCVD profile simulation; SPEEDIE; SiO/sub 2/; Stanford Profile Emulator; W; adsorption; chemical vapor deposition; cosine reemission distribution; low-pressure CVD; overhang test structures; physically based 3D simulator; polycrystalline Si; re-emission model; shadowed areas; single constant sticking coefficient model; surface contours; surface diffusion; unshadowed direct transport; Chemical vapor deposition; Etching; Geometry; Solid modeling; Surface fitting; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237013

Filename

237013