Temperature dependence of QCSE device characteristics and performance

Author

Venditti, M.B. ; Kabal, D.N. ; Ayliffe, M.H. ; Plant, D.V. ; Tooley, F.A.P. ; Richard, E. ; Currie, J. ; Spring Thorpes, A.J.

Author_Institution

Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada

fYear

1998

fDate

20-24 July 1998

Abstract

The normal method of operation for a GaAs MQW quantum confined Stark effect (QCSE) reflection modulator is given for a device operating wavelength, taken as 852 nm for the analysis in this paper. Modulation in the intensity of a reference optical beam is achieved by shifting the wavelength to achieve both low reflectivity and high reflectivity. The figure of merit for a QCSE modulator is its change in reflectivity from the low state to the high state is given.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; quantum confined Stark effect; reflectivity; semiconductor quantum wells; 852 nm; GaAs; GaAs MQW quantum confined Stark effect reflection modulator; QCSE device characteristics; device operating wavelength; figure of merit; high reflectivity; intensity modulation; low reflectivity; reference optical beam; temperature dependence; wavelength shifting; Gallium arsenide; Intensity modulation; Optical beams; Optical modulation; Optical reflection; Potential well; Quantum well devices; Reflectivity; Stark effect; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Broadband Optical Networks and Technologies: An Emerging Reality/Optical MEMS/Smart Pixels/Organic Optics and Optoelectronics. 1998 IEEE/LEOS Summer Topical Meetings

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-4953-9

Type

conf

DOI

10.1109/LEOSST.1998.690395

Filename

690395