Temperature dependence of Ni-germanide formed by Ni-Ge solid-state reaction

Author

Zhu, Shiyang ; Nakajima, Anri ; Yokoyama, Yuichi ; Ohkura, Kensaku

Author_Institution

Res. Center for Nanodevices and Syst., Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2005

fDate

7-8 June 2005

Firstpage

89

Lastpage

92

Abstract

The solid-state reaction of nickel and substrate germanium was performed by isochronously annealing at a temperature ranging from 250-600°C in vacuum. The reaction has been begun at 250°C, and substantial polycrystalline NiGe film has been formed at 350°C. The formed NiGe film has an orthorhombic structure with dimensions comparable to that of bulk NiGe. With increasing the annealing temperature from 400 to 600°C, the film surface roughness increases due to the increase of the grain size. All nickel germanide/n-Ge Schottky contacts has similar Schottky barrier height around 0.47-0.48 eV due to the Fermi level pinning effect.

Keywords

Fermi level; Schottky barriers; annealing; elemental semiconductors; germanium; germanium alloys; grain size; metallic thin films; nickel; nickel alloys; semiconductor-metal boundaries; surface chemistry; surface roughness; 250 to 600 C; Fermi level pinning effect; Ge; Ge substrate; Ni; Ni-germanide; NiGe; Schottky barrier height; Schottky contacts; film surface roughness; grain size; isochronous annealing; orthorhombic structure; polycrystalline film; solid-state reaction; temperature dependence; Annealing; Germanium; Nickel; Rough surfaces; Schottky barriers; Solid state circuits; Substrates; Surface roughness; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203890

Filename

1598676