• DocumentCode
    3316578
  • Title

    Methods for enhancing low-noise CFA performance (crossed-field amplifiers)

  • Author

    Dionne, N.J. ; Griffin, W. ; Smith, W.

  • Author_Institution
    Raytheon Co., Waltham, MA, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    529
  • Lastpage
    532
  • Abstract
    Excess noise generation in crossed-field devices is identified with the turbulent flow within the so-called hub region or the space-charge layer close to the cathode emitting surface. For magnetrons, ultralow noise operation is achieved by a decrease in externally supplied filament power to the thermionic emitter. However, in the case of pulsed, re-entrant CFAs (cross-field amplifiers) using secondary emitters, the means for attaining comparable reductions are more elusive, particularly for forward-wave versions of the device. Various methods for enhancing its signal-to-noise performance have been evaluated experimentally with modest success. Provision for RF circuits and geometrical structure such as axially directed grooves in the cathode generally has resulted in noise floor reduction by an order of magnitude. A barreling magnetic field shape of several percent has also demonstrated incremental efficiency improvements, extending the effective range over which the random noise improvement is achieved.<>
  • Keywords
    cathodes; electron device noise; magnetic fields; microwave amplifiers; microwave tubes; RF circuits; SNR performance enhancement; axially directed grooves; barreling magnetic field shape; cathode emitting surface; cross-field amplifiers; forward-wave versions; geometrical structure; hub region; low noise performance; noise floor reduction; pulsed reentrant type; random noise improvement; secondary emitters; space-charge layer; turbulent flow; ultralow noise operation; Cathodes; Circuit noise; Magnetic noise; Magnetrons; Noise generators; Noise shaping; Power supplies; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237052
  • Filename
    237052