AlGaN/GaN based electroabsorption modulator operating at fiber-optics telecommunication wavelengths

Author

Asgari, Asghar ; Tahmasebizad, N.

Author_Institution

Res. Inst. for Appl. Phys., Univ. of Tabriz, Tabriz

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

7

Lastpage

8

Abstract

The intersubband transition in quantum wells was investigated from the viewpoint of application to operate at fiber-optics telecommunication wavelengths at low switching powers. For this purpose, we have simulated an electroabsorption modulator for (lambda =1.55 mum) based on Stark shifting an intersubband resonance in AlN-GaN-AlGaN-AlN step QWs which can operate at fiber-optics telecommunication wavelengths with low applied voltage.

Keywords

III-V semiconductors; Stark effect; aluminium compounds; electro-optical modulation; electroabsorption; gallium compounds; optical fibre communication; semiconductor quantum wells; wide band gap semiconductors; AlGaN-GaN; Stark shifting; electroabsorption modulator; fiber-optics telecommunication wavelengths; intersubband transition; low switching powers; quantum wells; wavelength 1.55 mum; Absorption; Aluminum gallium nitride; Electron optics; Gallium nitride; Optical fiber communication; Optical modulation; Quantum computing; Resonance; Stationary state; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668215

Filename

4668215