Monte Carlo simulation of Gunn domain dynamics in power GaAs MESFETs with a recessed gate structure

An ensemble Monte Carlo simulation of Gunn domain dynamics in submicron-gate power GaAs MESFETs with a recessed gate structure is described. Time evolution of the two-dimensional particle distribution reveals three different domain motions, i.e. full-traveling, half-traveling, and stationary domains, depending on the geometrical parameters and bias conditions. The increase in recess width towards drain direction can effectively reduce the maximum electric field in the domain, resulting in suppression of Gunn oscillation while maintaining identical drain current values. An introduction of a surface n/sup +/ region is also proved to be effective in suppressing Gunn oscillation. Based on the simulation results, a criterion determining whether the domain becomes traveling or stationary is proposed.<>