Base transport in near-ideal graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors from 150 K to 370 K

Author

Prinz, E.J. ; Sturm, J.C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

975

Lastpage

978

Abstract

A detailed study of electron base transport in Si/Si/sub 1-x/Ge/sub x//Si graded-base n-p-n heterojunction bipolar transistors is presented. The temperature dependence from 150 to 370 K of the collector current in near-ideal devices with various base gradings is examined, and it is shown that this collector current can be modeled over the entire temperature range by a simple analytical formula. It is also shown that graded base devices with an estimated room-temperature base spreading resistance of 7 k Omega / Square Operator have a gain of about 4000 at 89 K.<>

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; 150 to 370 K; 89 K; Si-Si/sub 1-x/Ge/sub x/-Si; analytical model; collector current; electron base transport; graded base devices; heterojunction bipolar transistors; n-p-n HBT; near-ideal devices; temperature dependence; Electrons; Heterojunction bipolar transistors; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237077

Filename

237077