Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes

Author

Hu, W.D. ; Chen, X.S. ; Quan, Z.J. ; Li, Z.F. ; Liao, Q.J. ; Ye, Z.H. ; Hu, X.N. ; Lu, W.

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

39

Lastpage

40

Abstract

We report on 2D numerical simulations of photo-response characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption length and diffusion length are extracted numerically. An empirical formula is proposed to predict reasonable optimal thickness of absorption layer by theoretically analyzing its correlations with absorption length and diffusion length.

Keywords

IV-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photodiodes; 2D numerical simulations; HgCdTe; absorption layers; absorption length; infrared photodiodes; Electromagnetic wave absorption; Infrared detectors; Numerical simulation; Passivation; Photodetectors; Photodiodes; Physics; Poisson equations; Substrates; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668231

Filename

4668231