Modeling of polysilicon diffusion sources

A novel model for polysilicon diffusion sources is presented. It considers the following effects: (1) dopant diffusion in grains, in grain boundaries, and in the single-crystal silicon substrate; (2) dynamic dopant segregation between the grain and grain boundary and between the polysilicon and single-crystal silicon substrate; (3) dynamic dopant activation or clustering in grains and in the single-crystal silicon substrate; and (4) dynamic grain growth depending on the local grain size and on the local electron density. These mechanisms with completely different time scales are modeled simultaneously. It is possible to analyze the dopant redistribution during furnace and rapid optical annealing at arbitrary grain growth kinetics even during epitaxial realignment. The influence of the native interfacial oxide is examined.<>