A ´self-aligned´ selective MBE technology for high-performance bipolar transistors

Author

Sato, F. ; Takemura, H. ; Tashiro, T. ; Hirayama, H. ; Hiroi, M. ; Koyama, K. ; Nakamae, M.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

607

Lastpage

610

Abstract

A novel method of preparing high-performance self-aligned silicon bipolar transistors having a Si MBE (molecular beam epitaxy) base layer, called SSSB (super self-aligned selectively grown base) technology, has been developed. An SSSB technology features the simultaneous formation of a facet-free, ultrathin selective silicon epitaxial layer, and a selectively deposited graft base polysilicon film. Under an optimized gas-source MBE process condition, uniform epitaxial growth onto the

Keywords

bipolar transistors; doping profiles; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; 43 GHz; 60 nm; SSSB; SSSB technology; Si; base layer; cutoff frequency; doping level; graded profiled collector; high-performance bipolar transistors; optimized gas-source MBE process condition; polysilicon deposition; selective MBE technology; selectively deposited graft base polysilicon film; self-aligned technology; super self-aligned selectively grown base; uniform epitaxial growth; Bipolar transistors; Cutoff frequency; Doping profiles; Epitaxial growth; Epitaxial layers; Molecular beam epitaxial growth; Semiconductor epitaxial layers; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237125

Filename

237125