Novel dry cleaning using trisilane with a new single-wafer reactor

A single-wafer reactor developed for low-temperature Si/sub 2/H/sub 6/ epitaxy (600 degrees C) and low-temperature Si/sub 3/H/sub 8//H/sub 2/ pretreatment (820 degrees C) is described. The major points covered are (1) the reactor´s heating system, which uses resistance heating with a SiC-coated graphite susceptor, and (2) the gas ejection system, which provides a high flow velocity and effectively introduces gas to the wafer. Using this reactor, 600 degrees C epitaxial growth was obtained with a 950 degrees C H/sub 2/ bake and growth at 700 AA/min. It was found that Si/sub 3/H/sub 8//H/sub 2/ treatment at 820 degrees C effectively removes oxygen and carbon before epitaxy. The reactor developed provides low-temperature epitaxy for silane without the need for special treatment with, for example, ultraviolet light or plasma.<>