Suppression of hot carrier effects by laterally graded emitter (LGE) structure in BiCMOS

Author

Honda, H. ; Ishigaki, Y. ; Higashitani, K. ; Hatanaka, M. ; Nagao, S. ; Tsubouchi, N.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

227

Lastpage

230

Abstract

A novel device structure, called a laterally graded emitter LGE structure, is studied for high-reliability BiCMOS LSI. In the LGE structure, by adding a low-impurity concentration region (N/sup -/ region) near the surface to the N/sup +/ emitter, the peak electric field between emitter and base in reduced and hot carrier effects due to the reverse bias of the emitter-base junction are suppressed. The optimized N/sup -/ emitter maintains the high performance of a bipolar transistor and improves the tolerance against the reverse bias stress.<>

Keywords

BIMOS integrated circuits; bipolar transistors; hot carriers; reliability; BiCMOS; LGE; bipolar transistor; device structure; emitter-base junction; high-reliability; hot carrier effects suppression; laterally graded emitter structure; low-impurity concentration region; peak electric field reduction; tolerance against reverse bias stress; BiCMOS integrated circuits; Bipolar transistors; Hot carrier effects; Large scale integration; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237187

Filename

237187