Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP

Author

Engel, Th. ; Strittmatter, A. ; Passenberg, W. ; Seeger, A. ; Steingrüber, R. ; Mekonnen, G.G. ; Unterbörsch, G. ; Bimberg, D.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

75

Abstract

We report on our recent results on the monolithic integration of InP-based narrow band photoreceiver OEICs for 1.55 μm working in the 60 GHz range. These OEICs were achieved by successive improvement of the design and fabrication techniques used for OEICs working in the 38 GHz regime. The OEICs combine two types of high-speed devices, a top-illuminated InGaAs-InP metal-semiconductor-metal photodetector (MSM PD) with 0.2 μm feature and 0.15 μm high-electron-mobility-transistors (HEMT) based on InGaAs-InAlAs-InP

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; microwave photonics; optical design techniques; optical fabrication; optical receivers; photodetectors; 0.2 mum; 1.55 mum; GHz range; HEMT; InGaAs-InAlAs-InP; InGaAs-InP; InP; high-electron-mobility-transistors; high-speed devices; narrow band photoreceiver OEICs; optical design; optical fabrication; top-illuminated InGaAs-InP metal-semiconductor-metal photodetector; Coplanar waveguides; Fabrication; Frequency measurement; HEMTs; Indium phosphide; MIM capacitors; Narrowband; Optical amplifiers; Optoelectronic devices; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737740

Filename

737740