Electrical characterization of directly-bonded GaAs and Si

Author

Zhou, Yucai ; Zhu, Zuhua ; Lo, Yu-Hwa

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

91

Abstract

The advantages of direct bonding III-V wafers, such as InP and InGaAs, to Si wafers for device fabrications are well known. However, the case of integrating GaAs into Si has not been fully studied, partly due to the large difference of thermal expansion coefficients between them. We report the fabrication of heterojunctions between Si and GaAs by directly bonding at a temperature of 725°C in a H₂ atmosphere. The electrical properties of the bonded interface were studied by direct I-V analysis

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; semiconductor heterojunctions; silicon; surface treatment; wafer bonding; 725 C; GaAs; GaAs-Si; III-V wafers to Si; Si; bonded interface; chemical surface preparations; conduction band offset; direct I-V analysis; direct bonding; electrical properties; heterojunctions fabrication; high temperature bonded junction; hydrophilic Si surfaces; hydrophobic GaAs surface; hydrophobic Si surfaces; ideality factor; mirror polished (100) wafers; ohmic contacts; wafer bonding; Atmosphere; Fabrication; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Temperature; Thermal expansion; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737748

Filename

737748