Reliable operation of lattice-mismatched indium gallium arsenide photodetectors grown on silicon substrates

Author

Olsen, G.H. ; Woodruff, K.M. ; Speer, F.D. ; Rodefeld, D. ; Ban, V.S. ; Gasparian, G.A. ; Hladkey, J. ; Ackley, D. ; Mason, S. ; Erickson, G. ; Connolly, J.C. ; Dinkel, N.A. ; Forrest, S.R.

Author_Institution

EPITAXX Inc., Princeton, NJ, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

145

Lastpage

147

Abstract

In/sub 0.53/Ga/sub 0.47/As-InP photodetectors for the 0.9-1.7 mu m spectrum have been fabricated with compositional step-grading (using hydride vapor phase epitaxy) upon both GaAs-Si substrates (deposited by metallorganic chemical vapor deposition) and bulk GaAs substrates. Both exhibited good device performance with dark currents (at -5 V) near 100 nA for the GaAs-Si substrate and near 1 nA for the bulk GaAs substrate. Measured dark currents decreased an order of magnitude sequentially as the applied stress was reduced from wafer form to chip form. Dark currents decreased further after 1500 h of aging at 125 degrees C.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photodetectors; reliability; vapour phase epitaxial growth; -5 V; 0.9 to 1.7 micron; 1 nA; 100 nA; 125 degC; 1500 h; GaAs-Si substrates; In/sub 0.53/Ga/sub 0.47/As-InP photodetectors; MOCVD; VPE; bulk GaAs substrates; compositional step-grading; dark currents; hydride vapor phase epitaxy; lattice-mismatched; life tests; metallorganic chemical vapor deposition; photodetectors; reliable operation; Chemical vapor deposition; Current measurement; Dark current; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Photodetectors; Semiconductor device measurement; Stress measurement; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237206

Filename

237206