Pure and copper-iodine intercalated C60 fullerene films: technology of gas-phase formation and structure

The technology of C₆₀ fullerite film preparation by means of gas-phase deposition and structure of fullerite films are described. A flow three-channel set-up was used to obtain fullerene films. The films were deposited in the flow of inert gas under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber of the set-up. This set-up allows one to obtain the films of pure fullerenes and to synthesise the films from fullerene, compounds and doped fullerenes. The structure of two types films was investigated by FESEM (S4700, Hitachi, Japan) and SEM (JSM820, Japan) techniques: pure fullerite films onto silicon and sapphire substrates compound films were studied by FESEM technique. All samples have shown columnar structure with high level of porosity. The synthesis of films composed of fullerene and its compounds for use in electronics is demonstrated to be promising. For example, experiments confirm the possibility to use fullerene films in sensor electronics to produce humidity and thermal sensors. It is also possible to use the sensitivity of these films to isostatic pressure. The experiments with C₆₀-Cu-J films have shown quite strong dependence from pressure of different sort of medium-gas, which could be used as gas-sensitive sensors. The structure and preparation technology of resistive sensor based on fullerene films are described