Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD

Author

Ahoujja, M. ; Yeo, Y.K. ; Hengehold, R.L. ; Guido, L.J. ; Mitev, P. ; Johnstone, D.K. ; Kim, Y.H.

Author_Institution

Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

2000

fDate

2000

Firstpage

27

Lastpage

30

Abstract

The influence of arsenic doping on the electrical properties of GaN films grown on sapphire substrates by metalorganic chemical vapor deposition has been investigated using temperature dependent Hall effect and deep-level transient spectroscopy measurements. With an increase in arsine flow rate from 1.5 to 100 sccm, the carrier concentration increases from 8.6×10¹⁶ to 7.5×10¹⁷ cm ^-3 while the mobility ranges from 250 to 400 cm²/Vs. Two deep electron trap levels were observed at around 0.22 and 0.60 eV from the undoped GaN sample, whereas the deep level at around 0.22 eV was not observed in the As-doped samples

Keywords

Hall effect; III-V semiconductors; MOCVD coatings; arsenic; carrier density; carrier mobility; deep level transient spectroscopy; electron traps; gallium compounds; semiconductor doping; semiconductor epitaxial layers; wide band gap semiconductors; As-doped samples; GaN epitaxial layers; GaN:As; MOCVD; arsenic doping; arsine flow rate; carrier concentration; deep electron trap levels; deep-level transient spectroscopy; electrical properties; mobility; sapphire substrates; temperature dependent Hall effect; Chemical vapor deposition; Doping; Electric variables measurement; Epitaxial layers; Gallium nitride; Impurities; MOCVD; Optical films; Spectroscopy; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939191

Filename

939191