DocumentCode
331948
Title
High-power, reliable, 730 nm-emitting InGaAsP-active region diode lasers
Author
Al-Muhanna, A. ; Wade, J.K. ; Earles, T. ; Mawst, L.J.
Author_Institution
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
280
Abstract
Compressively-strained InGaAsP QW active (λ=732 nm) diode lasers achieve 2.9 W CW front-facet power from 100 μm-wide apertures, with reliable operation demonstrated at 0.5 W CW. Record-high characteristic temperature coefficients; T0=115 K and T1 =285 K, are obtained by growing on misoriented substrates
Keywords
Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; quantum well lasers; 0.5 W; 115 K; 2.9 W; 285 K; 730 nm; 732 nm; CW front-facet power; InGaAsP; InGaAsP QW active diode lasers; InGaAsP-active region diode lasers; compressively-strained; high-power lasers; laser reliability; laser transitions; misoriented substrates; record-high characteristic temperature coefficients; reliable operation; Apertures; Diode lasers; Photonics; Power engineering and energy; Power generation; Printing; Reliability engineering; Surface emitting lasers; Temperature; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737839
Filename
737839
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