Mound formation during GaAs(001) homoepitaxy at low substrate temperatures

Author

Apostolopoulos, G. ; Herfort, J. ; Däweritz, L. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2000

fDate

2000

Firstpage

105

Lastpage

108

Abstract

The mound formation during homoepitaxy on GaAs(001) is studied as a function of temperature and As₄:Ga flux ratio by means of atomic force microscopy. The results are compared to numerical growth simulations and the activation energy for surface diffusion and the Ehrlich-Schwoebel barrier height are estimated. The observed behavior is attributed to excess As condensing on the surface, which acts as a surfactant

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface diffusion; surfactants; As₄:Ga flux ratio; Ehrlich-Schwoebel barrier height; GaAs; GaAs(001) homoepitaxy; activation energy; atomic force microscopy; excess As; low substrate temperatures; mound formation; numerical growth simulations; surface diffusion; surfactant; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Inorganic materials; Molecular beam epitaxial growth; Numerical simulation; Substrates; Surface morphology; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939207

Filename

939207