GaAs DGMESFET modeling using SGMESFET models

Author

Bashirzadeh, Saeed ; Nabavi, Abdolreza ; Fardis, Masoum

Author_Institution

Iran Telecommun. Res. Center, Tehran, Iran

fYear

2005

fDate

30 Nov.-2 Dec. 2005

Firstpage

202

Lastpage

206

Abstract

This paper presents a complete and enhanced model for dual-gate MESFETs (DGMESFETs) using a cascode connection of dual single-gate MESFETs (SGMESFET) embedded by a group of external parasitic elements. An enhanced bias and frequency-dependent SGMESFET model is employed for internal SGFET´s, which accounts for charge-conservation and thermal effects. The initial values of the model parameters are obtained by measurement of DC and S-parameters. The parameters are then optimized using SAS, MATLAB and HSPICE. The model is implemented in HSPICE and its accuracy in predicting the characteristics of a NE25139 transistor is tested by DC and AC analysis.

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; GaAs; MATLAB; NE25139 transistor; S-parameters; charge-conservation; dual-gate MESFET; external parasitic elements; model parameters; single-gate MESFET; thermal effects; Accuracy; Frequency; Gallium arsenide; MATLAB; MESFETs; Mathematical model; Predictive models; Scattering parameters; Synthetic aperture sonar; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on

Print_ISBN

0-7803-9372-4

Type

conf

DOI

10.1109/RFIT.2005.1598911

Filename

1598911