• DocumentCode
    3320616
  • Title

    Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology

  • Author

    Hsu, Y.C. ; Shao, T.L. ; Chen, Chih

  • Author_Institution
    Dept. of Material Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2002
  • fDate
    4-6 Dec. 2002
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    Electromigration of SnAg3.8Cu0.7 solder was investigated in flip chip solder bump. An under-bump metallization (UBM) of Cr/Cr-Cu/Cu tri-layer was deposited on the chip side and electroless Cu/Ni/Au pad was deposited on the BT board side. Electromigration damage was observed under the current density of 2×104 A/cm2 at 100°C. Voids were found at cathode side and crack was observed at solder/thin film UBM interface after current stressing, and the bump failed after 168-hour stressing. Copper atoms were found to move in the direction of electron flow. Intermetallic compounds of Cu-Sn and Ni-Cu-Sn were also observed to spread into the solder bump due to current stressing.
  • Keywords
    copper alloys; electromigration; failure analysis; flip-chip devices; metallisation; silver alloys; soldering; tin alloys; 100 degC; Cr-CrCu-Cu; Cr/Cr-Cu/Cu trilayer; Cu-Ni-Au; Cu/Ni/Au electroless pad; SnAg3.8Cu0.7; SnAg3.8Cu0.7 solder joint; crack; current stress; electromigration induced failure; flip-chip solder bump; intermetallic compound formation; solder/thin film UBM interface; under-bump metallization; void; Cathodes; Chromium; Copper; Current density; Electromigration; Electrons; Flip chip; Gold; Metallization; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on
  • Print_ISBN
    0-7803-7682-X
  • Type

    conf

  • DOI
    10.1109/EMAP.2002.1188852
  • Filename
    1188852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3320616