• DocumentCode
    3321629
  • Title

    On-Chip Inductor-Less DC-DC Boost Converter with Non-overlapped Rotational-Interleaving Scheme

  • Author

    Das, Tamal ; Mandal, Pradip

  • Author_Institution
    Dept. of E&ECE, Indian Inst. of Technol., Kharagpur, India
  • fYear
    2010
  • fDate
    3-7 Jan. 2010
  • Firstpage
    324
  • Lastpage
    329
  • Abstract
    An architecture of inductor-less DC-DC boost converter for high efficiency and low output ripple is proposed. Output ripple is reduced by splitting flying capacitors into a number of smaller elements and using a new switching scheme called non-overlapped rotational-interleaving (NORI). The proposed switching scheme also helps to eliminate reversion and shoot through current hence improves the power efficiency. The proposed converter is designed in 0.18 ¿M CMOS thick gate process having 440 pF total flying capacitance. The target specification of load current is 1 mA - 23 mA for 5 V - 6.5 V output voltage from an input supply of 3.3 V. The achieved peak power efficiency is 89% at 10 mA load current as compare to 83% peak power efficiency obtained from the best existing architecture designed in same technology. The output ripple at 10 mA load current is 2.2 mV in presence of only 50 pF load capacitance.
  • Keywords
    CMOS integrated circuits; DC-DC power convertors; capacitors; CMOS; capacitance 440 pF; capacitance 50 pF; current 1 mA to 23 mA; flying capacitors; non-overlapped rotational-interleaving scheme; on-chip inductor-less DC-DC boost converter; output ripple; size 0.18 mum; voltage 2.2 V; voltage 3.3 V; voltage 5 V to 6.5 V; Batteries; Capacitance; Current supplies; DC-DC power converters; MOS devices; Rails; Switching converters; Topology; Very large scale integration; Voltage; dc-dc converter; non-overlapped rotational-interleaving; reversion current; switched capacitor converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 2010. VLSID '10. 23rd International Conference on
  • Conference_Location
    Bangalore
  • ISSN
    1063-9667
  • Print_ISBN
    978-1-4244-5541-6
  • Type

    conf

  • DOI
    10.1109/VLSI.Design.2010.36
  • Filename
    5401338