The effect of parasitic inductances in distributed amplifiers

Author

Zólomy, A. ; Hilt, A. ; Járó, G. ; Berceli, T.

Author_Institution

Tech. Univ. Budapest, Hungary

Volume

2

fYear

1998

fDate

20-22 May 1998

Firstpage

463

Abstract

The gain-bandwidth relations of distributed amplifiers (DA) are analyzed If is shown that the amplifier performance is uniquely related to the properties of the active elements and the electrical length of the transmission lines between them. It is proved that the parasitic inductance of the connections between the embedding network and the transistors strongly distorts the gain characteristics. The paper proposes the so-called V-shape connection structure which overcomes the above mentioned disadvantages

Keywords

MMIC amplifiers; distributed amplifiers; hybrid integrated circuits; inductance; integrated circuit interconnections; microwave integrated circuits; wideband amplifiers; V-shape connection structure; active element properties; amplifier performance; distributed amplifiers; electrical length; embedding network; gain characteristics distortion; gain-bandwidth relations; parasitic inductances; transistors; transmission lines; Admittance; Bandwidth; Circuits; Distributed amplifiers; Impedance; Parasitic capacitance; Performance analysis; Transfer functions; Transmission line theory; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves and Radar, 1998. MIKON '98., 12th International Conference on

Conference_Location

Krakow

Print_ISBN

83-906662-0-0

Type

conf

DOI

10.1109/MIKON.1998.740824

Filename

740824