DocumentCode
3327072
Title
Hydrogen Sensitivity and Mechanism of Pd/V2O5 Thin Films
Author
Haihu Yu ; Wu, Yinwei ; Li, Xiaofu ; Huang, Hua ; Shi, Yong ; Zhou, Lingde
Author_Institution
Nat. Eng. Lab. for Fiber Opt. Sensing Technol., Wuhan Univ. of Technol., Wuhan, China
fYear
2011
fDate
16-18 May 2011
Firstpage
1
Lastpage
3
Abstract
Abstract-Pd/V2O5 double layer films were deposited on glass substrates by magnetron sputtering. The hydrogen sensing properties of the films were analyzed using a UV-visible spectrophotometer. The surface morphology of the films was observed under a scanning electron microscope. Hydrogen sensing mechanism of the Pd/V2O5 films was researched on the basis of Raman spectra. The obtained Pd/V2O5 films are sensitive to hydrogen. A change of about 25% in relative transmittance at 560 nm can be observed when a Pd (30 nm)/V2O5 (280 nm) film was exposed to 4% hydrogen. No obvious defect can be observed after the films were exposed to hydrogen. For the magnetron sputtered Pd/V2O5 double layer films, the Pd layer mainly acts as a catalyst. The hydrogen molecules adsorbed on the Pd layer are dissociated into hydrogen atoms. When the hydrogen atoms diffuse into the inner V2O5 layers, V2O5 reacts with hydrogen, resulting the transformation of some V5+ into V4+ and the formation of vanadium bronze and as well as the change in the transmittance of the films.
Keywords
Raman spectra; gas sensors; hydrogen; palladium; scanning electron microscopy; sputter deposition; surface morphology; thin films; ultraviolet spectra; vanadium compounds; visible spectra; H2; Pd; Pd-V2O5; Raman spectra; UV-visible spectrophotometer; catalyst; diffusion; dissociation; double layer films; glass substrates; hydrogen sensitivity; magnetron sputtering; scanning electron microscopy; surface morphology; thin films; transmittance; wavelength 560 nm; Atomic layer deposition; Magnetic films; Sensors; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2011 Symposium on
Conference_Location
Wuhan
ISSN
2156-8464
Print_ISBN
978-1-4244-6555-2
Type
conf
DOI
10.1109/SOPO.2011.5780545
Filename
5780545
Link To Document