Emission characteristics of a gallium arsenide wedge emitter monolithically fabricated with an air bridge and a cantilever anode

Author

Mimura, H. ; Yilmazoglu, O. ; Shimawaki, Hidetaka ; Yokoo, K. ; Mutamba, K. ; Hartnagel, H.

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2001

fDate

2001

Firstpage

129

Lastpage

130

Abstract

GaAs wedge emitters with an air bridge and a cantilever anode were monolithically fabricated using a micromachining technique. The threshold voltage of electron emission is about 8 V for the air bridge emitter, while only 1.5 V for the cantilever emitter. The current-voltage characteristic of the air bridge emitter is due to a field emission, while that of the cantilever emitter is recognized as direct tunneling of electrons through the reduction of the air gap between the emitter and cantilever by electrostatic force

Keywords

III-V semiconductors; anodes; electron field emission; gallium arsenide; micromachining; semiconductor technology; tunnelling; 1.5 V; 8 V; GaAs; GaAs wedge emitters; air bridge; air bridge emitter; air gap reduction; cantilever anode; cantilever emitter; current-voltage characteristic; direct electron tunneling; electron emission; electrostatic force; emission characteristics; emitter-cantilever air gap; field emission; gallium arsenide wedge emitter; micromachining technique; monolithic fabrication; threshold voltage; Anodes; Bridge circuits; Character recognition; Current-voltage characteristics; Electron emission; Electrostatics; Gallium arsenide; Micromachining; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939687

Filename

939687