A silicon MOSFET/field emission array fabricated using CMP

Author

Hong, C.-Y. ; Akinwande, A.I.

Author_Institution

Microsystems Technol. Lab., MIT, Cambridge, MA, USA

fYear

2001

fDate

2001

Firstpage

145

Lastpage

146

Abstract

Integrated lightly doped drain MOSFET is used to control the electron supply of silicon field emission array resulting in low voltage switching of emission current. The LD-MOSFET/FEA was fabricated using isotropic and anisotropic etch of silicon, oxidation sharpening and chemical mechanical polishing. Current voltage characterization of the LD-MOSFET/FEA demonstrated modulation of electron emission by the MOSFET gate voltage. Numerical simulation studies of the device operation will also be presented

Keywords

MOSFET; chemical mechanical polishing; electron field emission; elemental semiconductors; etching; oxidation; silicon; vacuum microelectronics; LD-MOSFET/FEA; Si; anisotropic etching; chemical-mechanical polishing; current-voltage characteristics; electron emission modulation; fabrication; isotropic etching; lightly doped drain MOSFET; low-voltage switching; numerical simulation; oxidation sharpening; silicon field emission array; Anisotropic magnetoresistance; Electron emission; Etching; Field emitter arrays; Lighting control; Low voltage; MOSFET circuits; Optical arrays; Silicon; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939695

Filename

939695