Effect of gamma radiation on potential ionising radiation detectors and dosimeters based on quantum dots

Author

Hobson, P.R. ; Leslie, D.E. ; Smith, D.R.

Author_Institution

Centre for Sensors & Instrum., Brunel Univ., Uxbridge, UK

fYear

2011

fDate

23-29 Oct. 2011

Firstpage

3015

Lastpage

3017

Abstract

The fluorescent quantum yield of core-shell (CdSe/ZnS) quantum dots (QDs) in hexane has recently been shown to decrease with increasing gamma irradiation dose. Here we report the effects on the fluorescent emission spectra of commercially produced CdSe/ZnS QDs of 2.5 nm, 3.3 nm and 6.3 nm size in toluene, following exposure to 1 MeV gamma irradiation in the range 0.1-110 Gy. We show that damage depends on the size of the QDs and that increasing the concentration of QDs in the toluene decreases the effect. Recovery of fluorescence quantum yield one day after irradiation has been seen, with full recovery noted for the 6.3 nm QDs.

Keywords

II-VI semiconductors; cadmium compounds; dosimeters; fluorescence; gamma-ray effects; semiconductor counters; semiconductor quantum dots; solid scintillation detectors; zinc compounds; CdSe-ZnS; core-shell quantum dots; dosimeters; electron volt energy 1 MeV; fluorescent emission spectra; fluorescent quantum yield; gamma irradiation dose; gamma radiation effect; hexane; ionising radiation detectors; radiation absorbed dose 0.1 Gy to 110 Gy; size 2.5 nm; size 3.3 nm; size 6.3 nm; toluene; Fluorescence; Quality of service; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE

Conference_Location

Valencia

ISSN

1082-3654

Print_ISBN

978-1-4673-0118-3

Type

conf

DOI

10.1109/NSSMIC.2011.6152542

Filename

6152542