• DocumentCode
    3328117
  • Title

    Extended Interaction Klystrons for terahertz power amplifiers

  • Author

    Chernin, D. ; Burke, Annette ; Chernyavskiy, I. ; Petillo, John ; Horoyski, A.R.P. ; Hyttinen, Mark ; Dobbs, Richard ; Berry, Dave ; Blank, Marita ; Nguyen, Khanh ; Jabotinsky, V. ; Wright, Edward ; Pershing, Dean ; Calame, Jeffrey ; Levush, Baruch ; Gaie

  • Author_Institution
    Sci. Applic. Int. Corp., McLean, VA, USA
  • fYear
    2010
  • fDate
    20-24 June 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. Extended Interaction Klystrons have been demonstrated at frequencies up to 218 GHz CW and 229 GHz pulsed. Modern design, fabrication, and measurement technologies show promise of extending their operation into the THz regime. This paper describes the challenges and some novel approaches to the development of EIKs operating terahertz frequencies, while simultaneously meeting demanding requirements for output power, gain, bandwidth, and efficiency.The main challenges in design include focus and transport of an emittance dominated beam, development of a broadband, high gain circuit, and the minimization of the sensitivity of design to the effects of fabrication and alignment tolerances. The main challenges in fabrication and integration include achieving required component dimensions and alignment within specified tolerances and achieving high quality surface finishes using materials with satisfactory mechanical and thermal properties.
  • Keywords
    klystrons; microwave power amplifiers; design sensitivity; emittance dominated beam transport; extended interaction klystrons; fabrication effect; high gain circuit; high quality surface; mechanical property; terahertz power amplifier; thermal property; Bandwidth; Circuits; Fabrication; Frequency; Klystrons; Minimization; Power amplifiers; Power generation; Pulse amplifiers; Submillimeter wave technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2010 Abstracts IEEE International Conference on
  • Conference_Location
    Norfolk, VA
  • ISSN
    0730-9244
  • Print_ISBN
    978-1-4244-5474-7
  • Electronic_ISBN
    0730-9244
  • Type

    conf

  • DOI
    10.1109/PLASMA.2010.5533941
  • Filename
    5533941