DocumentCode
3328598
Title
Current image tunneling spectroscopies of chemical vapor deposited diamond films
Author
Lin, I.N. ; Chen, T.T. ; Chou, Y.P. ; Cheng, H.F.
Author_Institution
Mater. Sci. Center, Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan
fYear
2001
fDate
2001
Firstpage
283
Lastpage
284
Abstract
Localized electron field emission properties of the boron- (or nitrogen-) doped diamond films were examined using current image tunneling spectroscopy (CITS). The electron field emission mechanism implied by these measurements was discussed
Keywords
atomic force microscopy; boron; diamond; electron affinity; electron field emission; nitrogen; plasma CVD coatings; scanning tunnelling microscopy; AFM; C:B; C:N; STM; chemical vapor deposited diamond films; current image tunneling spectroscopies; localized electron field emission properties; plasma CVD films; Atomic force microscopy; Chemicals; Current measurement; Electron emission; Photonic band gap; Plasma properties; Scanning electron microscopy; Spectroscopy; Surface morphology; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939764
Filename
939764
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