Inductance simulation using GaAs MESFETs

Author

Tangsrirat, Worapong ; Surakampontorn, Wanlop ; Riewruja, Vanchai ; Dumawipata, T.

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

fYear

1998

fDate

24-27 Nov 1998

Firstpage

275

Lastpage

278

Abstract

This paper proposes a method for an inductance simulation by using GaAs MESFET devices. The realization method is based on the use of a GaAs voltage-to-current transducer and is also suitable for implementation in monolithic integrated circuit form. The circuit has wide bandwidth, good linearity and the simulated inductive reactance value is a linear function of resistor and capacitor. The PSPICE simulation results show that the properties of the circuit are in close agreement with the theoretical prediction

Keywords

III-V semiconductors; MESFET integrated circuits; active networks; field effect analogue integrated circuits; frequency response; gallium arsenide; inductance; linear network analysis; linear network synthesis; simulation; GaAs; GaAs MESFET; GaAs voltage-to-current transducer; PSPICE simulation; floating inductance; inductance simulation; linearity; monolithic integrated circuit form; performance analysis; wide bandwidth; Bandwidth; Circuit simulation; Gallium arsenide; Inductance; Linearity; MESFETs; Monolithic integrated circuits; Resistors; Transducers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on

Conference_Location

Chiangmai

Print_ISBN

0-7803-5146-0

Type

conf

DOI

10.1109/APCCAS.1998.743743

Filename

743743