DocumentCode
3329639
Title
Degradation by solar radiation on the performances for microelectronic components
Author
Touft, N. ; El-Tahchi, M. ; Pélanchon, F. ; Mialhe, P.
Author_Institution
Centre d´´Etudes Fondamentales, Perpignan Univ., France
fYear
2000
fDate
2000
Firstpage
163
Lastpage
165
Abstract
A study on the effects of ionising radiation on the transport phenomena of carriers in the substrate-drain junction of power transistors is realised for doses compatible with a high atmospheric exposure. The strong augmentation of the recombination currents and of the ideal factor are observed. The degradation of parameters of the junction is strongly dependent on the total dose. These effects are discussed and a new method is introduced for the characterisation of a functioning system in a terrestrial atmospheric environment
Keywords
electron-hole recombination; insulated gate field effect transistors; power field effect transistors; radiation effects; HEXFET; carriers; high atmospheric exposure; ionising radiation; microelectronic components degradation; microelectronic components performances; power transistors; recombination currents; solar radiation; substrate-drain junction; terrestrial atmospheric environment; transport phenomena; Cobalt; Degradation; FETs; Fabrication; Polarization; Production;
fLanguage
English
Publisher
ieee
Conference_Titel
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location
Beirut
Print_ISBN
0-7803-7117-8
Type
conf
DOI
10.1109/CMPLES.2000.939888
Filename
939888
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