Biased-Irradiation Characteristics of the Floating Gate Switch in FPGA

Author

Wang, J.J. ; Kuganesan, G. ; Charest, N. ; Cronquist, B.

Author_Institution

Actel Corp., Mountain View, CA

fYear

2006

fDate

38899

Firstpage

101

Lastpage

104

Abstract

The radiation characteristic of the floating-gate switch in a 0.22 mum flash-based FPGA is investigated by measuring the threshold voltage after each stage of X-ray irradiation. The focus is on the applied bias on the floating-gate device during irradiation. A two-parameter, semi-physical model is used to fit the experimental results. For an erase or write state with a particular irradiation-bias, a set of two fitting parameters can accurately determine the threshold voltage with respect to total radiation dose. The modeling result can be easily integrated into the SPICE simulator for circuit design purposes

Keywords

field programmable gate arrays; flash memories; radiation hardening (electronics); 0.22 micron; SPICE simulator; X-ray irradiation; biased-irradiation characteristics; flash-based FPGA; floating gate switch; threshold voltage; CMOS technology; Circuits; Electrons; Field programmable gate arrays; Nonvolatile memory; Robustness; Semiconductor device measurement; Silicon; Switches; Threshold voltage; Digital integrated circuit; Flash; field programmable gate array; total dose effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2006 IEEE

Conference_Location

Ponte Vedra, FL

Print_ISBN

1-4244-0638-2

Type

conf

DOI

10.1109/REDW.2006.295475

Filename

4077289