Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates

Author

Palmour, J.W. ; Allen, S.T. ; Sheppard, S.T. ; Pribble, W.L. ; Sadler, R.A. ; Alcorn, T.S. ; Ring, Z. ; Carter, C.H., Jr.

Author_Institution

Cree Res. Inc., Durham, NC, USA

fYear

1999

fDate

23-23 June 1999

Firstpage

38

Lastpage

41

Abstract

The two technologies being studied are SiC MESFETs based on homoepitaxially grown epilayers, primarily targeted for applications from UHF up to 10 GHz, and GaN/AlGaN HEMTs that are grown via heteroepitaxial MOCVD which can operate at frequencies potentially up to 35 GHz. As a result of the use of 4H-SiC semi-insulating substrates, impressive demonstrations of microwave power have been made in both types of devices. This paper will describe progress made in SiC substrates, and some of the resulting microwave device demonstrations in both SiC MESFETs and in GaN/AlGaN devices grown on SiC.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power MESFET; silicon compounds; substrates; wide band gap semiconductors; 10 GHz; 35 GHz; GaN; GaN/AlGaN HEMT; SiC; SiC MESFET; heteroepitaxial MOCVD layer; homoepitaxial layer; microwave power device; semi-insulating 4H-SiC substrate; wide bandgap material; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MESFETs; MOCVD; MODFETs; Microwave devices; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806315

Filename

806315