DocumentCode
3336248
Title
Pulsed laser deposition of LiNbO3/LiTaO3 multilayer films on SiO2/Si(100) substrate
Author
Guo, X.L. ; Liu, Z.G. ; Hu, W.S. ; Xiong, S.B. ; Zhu, S.N. ; Zhu, Y.Y. ; Lin, C.Y.
Author_Institution
Lab. of Solid State Microstructures, Nanjing Univ., China
fYear
1996
fDate
25-30 Sep 1996
Firstpage
367
Lastpage
372
Abstract
LiNbO3/LiTaO3 (LN/LT) multilayer films are grown on Si(100) wafer coated with a SiO2 buffer layer by pulsed laser deposition. Both LN and LT layers are polycrystalline, exhibiting some degree of c-texture, and their compositions are nearly stoichiometric. The film surfaces are smooth, crack free and lack large droplets. The film/substrate interface is sharp and no compositional interdiffusion is detected. Optical waveguide properties are demonstrated. Both TE and TM modes are excited and light propagates well in the alternating LN/LT layers. The average refractive index and thickness of the LN/LT multilayer films are calculated
Keywords
lithium compounds; optical films; optical waveguides; piezoelectric thin films; pulsed laser deposition; refractive index; surface structure; LiNbO3-LiTaO3; LiNbO3/LiTaO3 multilayer films; Si; SiO2 buffer layer; SiO2-Si; SiO2/Si(100) substrate; TE modes; TM modes; average refractive index; c-texture; film/substrate interface; nearly stoichiometric composition; optical waveguide properties; piezoelectric; polycrystalline layers; pulsed laser deposition; smooth film surfaces; thickness; Buffer layers; Nonhomogeneous media; Optical films; Optical pulses; Optical surface waves; Optical waveguides; Pulsed laser deposition; Substrates; Surface cracks; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578102
Filename
578102
Link To Document