DocumentCode
3336465
Title
Observation of valence band electron emission from n-type silicon field emitter arrays
Author
Meng Ding ; Han Kim ; Akinwande, A.I.
Author_Institution
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear
1999
fDate
23-23 June 1999
Firstpage
170
Lastpage
171
Abstract
We investigate the electron emission behavior of n-type Si field emitters in the presence of high applied voltages. Electron emission from the valence band of an n-type Si field emitter array is reported for the first time.
Keywords
electron field emission; elemental semiconductors; field emission displays; silicon; vacuum microelectronics; valence bands; Si; applied voltage; field emitter arrays; valence band electron emission; Apertures; Electron emission; Electrostatics; Field emitter arrays; Laboratories; Low voltage; Microwave antenna arrays; Microwave technology; Sensor arrays; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806360
Filename
806360
Link To Document