Development of radiation hard silicon sensors for the CBM silicon tracking system using simulation approach

Author

Chatterji, Sudeep ; Lymanets, Anton ; Heuser, Johann M.

Author_Institution

GSI Helmholtz Centre for Heavy Ion Res. GmbH, Darmstadt, Germany

fYear

2009

fDate

Oct. 24 2009-Nov. 1 2009

Firstpage

1712

Lastpage

1715

Abstract

The very intense radiation environment of the planned Â¿Compressed Baryonic MatterÂ¿ (CBM) experiment at the international research centre Â¿Facility for Antiproton and Ion ResearchÂ¿ (FAIR) makes radiation hardness a central issue for the Silicon Tracking System (STS). Detailed simulations have been carried out to understand the radiation damage in Double Sided Silicon Strip Detectors (DSSD) to be used for CBM STS. This includes both Technology CAD (TCAD) simulations as well as SPICE circuit simulation. To confirm the validity of these simulation packages, we plan to compare the real measurements with the simulated data.

Keywords

nuclear electronics; radiation hardening (electronics); silicon radiation detectors; CAD simulations; CBM silicon tracking system; SPICE circuit simulation; compressed baryonic matter silicon tracking system; double sided silicon strip detectors; radiation damage; radiation hard silicon sensors; radiation hardness; simulation approach; Circuit simulation; Decision support systems; Detectors; Mesons; Neutrons; Particle tracking; Sensor systems; Silicon; Sociotechnical systems; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE

Conference_Location

Orlando, FL

ISSN

1095-7863

Print_ISBN

978-1-4244-3961-4

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2009.5402225

Filename

5402225