DocumentCode
3336665
Title
High-speed quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 /spl mu/m
Author
Yuan, P. ; Baklenov, O. ; Nie, H. ; Holmes, A.L. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
1999
fDate
23-23 June 1999
Firstpage
202
Lastpage
203
Abstract
In this paper we describe a resonant-cavity separate absorption, charge and multiplication (SACM) APD structure. Compared to our previous work, the gain has been increased from -18 to >50 and we have measured the frequency response. In the low gain regime, the bandwidth is 35 GHz and at higher gains, where the frequency response is determined by the gain-bandwidth product, we observe a gain-bandwidth product of 220 GHz.
Keywords
avalanche photodiodes; cavity resonators; quantum well devices; semiconductor device measurement; semiconductor quantum dots; bandwidth; frequency response; gain; gain-bandwidth product; high-speed quantum-dot resonant-cavity SACM avalanche photodiodes; low gain regime; resonant-cavity separate absorption charge and multiplication APD structure; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Frequency response; Indium gallium arsenide; Microelectronics; Photoconductivity; Quantum dots; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806373
Filename
806373
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